SCT30N120
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см. техническую документацию
см. техническую документацию
1 шт. со склада г.Москва, срок 6-7 дней
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Альтернативные предложения1
Описание
Электроэлемент
Описание Транзистор: N-MOSFET, SiC, полевой, 1,2кВ, 34А, Idm: 90А, 270Вт Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 40A(Tc) |
| Drain to Source Voltage (Vdss) | 1200V |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 105nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700pF @ 400V |
| Manufacturer | STMicroelectronics |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 200В°C(TJ) |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Part Status | Active |
| Power Dissipation (Max) | 270W(Tc) |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 20A, 20V |
| Series | - |
| Standard Package | 30 |
| Supplier Device Package | HiP247в(ў |
| Technology | SiCFET(Silicon Carbide) |
| Vgs (Max) | +25V, -10V |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA(Typ) |
| Channel Mode | Enhancement |
| Channel Type | N |
| Forward Diode Voltage | 3.5V |
| Maximum Continuous Drain Current | 45 A |
| Maximum Drain Source Resistance | 100 mΩ |
| Maximum Drain Source Voltage | 1200 V |
| Maximum Gate Source Voltage | -10 V, +25 V |
| Maximum Operating Temperature | +200 °C |
| Maximum Power Dissipation | 270 W |
| Minimum Operating Temperature | -55 °C |
| Number of Elements per Chip | 1 |
| Package Type | HiP247 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 105 nC @ 20 V |
| Width | 5.15mm |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 600 |
| Fall Time: | 28 ns |
| Id - Continuous Drain Current: | 45 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +200 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | HiP-247-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 270 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 105 nC |
| Rds On - Drain-Source Resistance: | 80 mOhms |
| Rise Time: | 20 ns |
| Series: | SCT30N120 |
| Subcategory: | MOSFETs |
| Technology: | SiC |
| Tradename: | HiP247 |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 45 ns |
| Typical Turn-On Delay Time: | 19 ns |
| Vds - Drain-Source Breakdown Voltage: | 1.2 kV |
| Vgs - Gate-Source Voltage: | -10 V, +25 V |
| Vgs th - Gate-Source Threshold Voltage: | 3.5 V |
| Вес, г | 7.23 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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