CDM7-600LR TR13 PBFREE
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см. техническую документацию
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Номенклатурный номер: 8007601635
Бренд: Central Semiconductor Corp
Описание
CDMxx Silicon N-Channel Power MOSFETs
Central Semiconductor CDMxx Silicon N-Channel Power MOSFETs are designed for high voltage, fast switching applications such as Power Factor Correction (PFC), lighting and power inverters. These MOSFETs combine high voltage capability with low R DS(ON), low threshold voltage, and low gate charge for optimal efficiency. These devices are offered in through-hole and surface mount.
Central Semiconductor CDMxx Silicon N-Channel Power MOSFETs are designed for high voltage, fast switching applications such as Power Factor Correction (PFC), lighting and power inverters. These MOSFETs combine high voltage capability with low R DS(ON), low threshold voltage, and low gate charge for optimal efficiency. These devices are offered in through-hole and surface mount.
Технические параметры
| Brand: | Central Semiconductor |
| Channel Mode: | Enhancement |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Id - Continuous Drain Current: | 7 A |
| Manufacturer: | Central Semiconductor |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Pd - Power Dissipation: | 60 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 22.9 nC |
| Rds On - Drain-Source Resistance: | 530 mOhms |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
Техническая документация
Datasheet
pdf, 890 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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