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KSC5502DTM

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490 руб.

от 2 шт. — 430 руб.

от 10 шт. — 376 руб.

Добавить в корзину 1 шт. на сумму 490 руб.

Номенклатурный номер: 8007766169

Бренд: ON Semiconductor***

Описание

Электроэлемент

TRANSISTOR, NPN, 600V, 2A, TO252; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:600V; Transition Frequency ft:11MHz; Power Dissipation Pd:50W; DC Collector Current:2A; DC Current Gain hFE:15hFE; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)

Технические параметры

Category	Bipolar Power
Collector Current (DC)	2(A)
Collector-Base Voltage	1200(V)
Configuration	Single
DC Current Gain	15@200MA@1V/4@1A@1V
Emitter-Base Voltage	12(V)
Frequency	11(MHz)
Mounting	Surface Mount
Number of Elements	1
Operating Temp Range	-65C to 150C
Operating Temperature Classification	Military
Output Power	Not Required(W)
Package Type	DPAK
Packaging	Tape and Reel
Pin Count	2+Tab
Power Dissipation	50(W)
Rad Hardened	No
Transistor Polarity	NPN
Brand:	onsemi/Fairchild
Collector- Base Voltage VCBO:	1.2 kV
Collector- Emitter Voltage VCEO Max:	600 V
Collector-Emitter Saturation Voltage:	400 mV
Configuration:	Single
Continuous Collector Current:	2 A
DC Collector/Base Gain hfe Min:	14
Emitter- Base Voltage VEBO:	12 V
Factory Pack Quantity: Factory Pack Quantity:	2500
Gain Bandwidth Product fT:	11 MHz
Manufacturer:	onsemi
Maximum DC Collector Current:	2 A
Maximum Operating Temperature:	+150 C
Mounting Style:	SMD/SMT
Package / Case:	DPAK-3
Pd - Power Dissipation:	87.83 W
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	KSC5502D
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Maximum Collector Base Voltage	1200 V
Maximum Collector Emitter Voltage	600 V
Maximum DC Collector Current	2 A
Maximum Emitter Base Voltage	12 V
Maximum Operating Frequency	1 MHz
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	50 W
Minimum DC Current Gain	12
Mounting Type	Surface Mount
Number of Elements per Chip	1
Transistor Configuration	Single
Transistor Type	NPN
Вес, г	0.557