STB33N60M2

Изображения служат только для ознакомления,
см. техническую документацию

2 шт. со склада г.Москва, срок 6-7 дней

1 280 руб.

от 2 шт. — 1 160 руб.

Добавить в корзину 1 шт. на сумму 1 280 руб.

Альтернативные предложения1

Номенклатурный номер: 8008380030

Электроэлемент

MOSFET N-channel 600 V, 0.108 Ohm typ 26 A MDmesh M2 Power MOSFETs in D2PAK package

Automotive	No
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current - (A)	26
Maximum Drain Source Resistance - (mOhm)	125@10V
Maximum Drain Source Voltage - (V)	650
Maximum Gate Source Voltage - (V)	??25
Maximum Gate Threshold Voltage - (V)	4
Maximum Power Dissipation - (mW)	190000
Military	No
Number of Elements per Chip	1
Operating Temperature - (??C)	-55~150
Packaging	Tape and Reel
Pin Count	3
Process Technology	MDmesh II
Standard Package Name	TO-263
Supplier Package	D2PAK
Typical Gate Charge @ 10V - (nC)	45.5
Typical Gate Charge @ Vgs - (nC)	45.5@10V
Typical Input Capacitance @ Vds - (pF)	1781@100V
Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1000
Fall Time:	9 ns
Id - Continuous Drain Current:	26 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	TO-263-3
Pd - Power Dissipation:	190 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	45.5 nC
Rds On - Drain-Source Resistance:	125 mOhms
Rise Time:	9.6 ns
Series:	STB33N60M2
Subcategory:	MOSFETs
Technology:	Si
Tradename:	MDmesh
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	109 ns
Typical Turn-On Delay Time:	16 ns
Vds - Drain-Source Breakdown Voltage:	600 V
Vgs - Gate-Source Voltage:	-25 V, +25 V
Vgs th - Gate-Source Threshold Voltage:	3 V