VN2450N3-G

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660 руб.

от 2 шт. — 560 руб.

от 5 шт. — 491 руб.

от 10 шт. — 457.50 руб.

Добавить в корзину 1 шт. на сумму 660 руб.

Номенклатурный номер: 8008412220

Электроэлемент

Транзистор МОП n-канальный, 500В, 500мА, 1Вт, TO92

Current - Continuous Drain (Id) @ 25В°C	200mA(Tj)
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	150pF @ 25V
Manufacturer	Microchip Technology
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 150В°C(TJ)
Package / Case	TO-226-3, TO-92-3(TO-226AA)
Packaging	Bulk
Part Status	Active
Power Dissipation (Max)	1W(Ta)
Rds On (Max) @ Id, Vgs	13 Ohm @ 400mA, 10V
Supplier Device Package	TO-92-3
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	4V @ 1mA
ECCN	EAR99
HTS	8541290095
RoHS	Yes
UnitofMeasure	PerEach
Brand:	Microchip Technology
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity:	1000
Fall Time:	20 ns
Id - Continuous Drain Current:	200 mA
Manufacturer:	Microchip
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package/Case:	TO-92-3
Packaging:	Bulk
Pd - Power Dissipation:	1 W
Product Category:	MOSFET
Product Type:	MOSFET
Rds On - Drain-Source Resistance:	13 Ohms
Rise Time:	10 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Type:	FET
Typical Turn-Off Delay Time:	25 ns
Typical Turn-On Delay Time:	10 ns
Vds - Drain-Source Breakdown Voltage:	500 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.5 V