NCD5701CDR2G

NCD5701CDR2G
Изображения служат только для ознакомления,
см. техническую документацию
650 руб.
от 10 шт.540 руб.
от 25 шт.490 руб.
от 100 шт.378.96 руб.
Добавить в корзину 1 шт. на сумму 650 руб.
Номенклатурный номер: 8008458773

Описание

NCD5700 and NCD5701 IGBT Gate Drivers onsemi NCD5700 and NCD5701 Insulated-Gate Bipolar Transistor (IGBT) Gate Drivers are high-current, high-performance devices for high power applications, such as solar inverters, motor control, and Uninterruptable Power Supplies (UPSs). These Gate Drivers are highly-integrated, offering a cost-effective solution by eliminating many external components. Device protection features of the NCD5700 and NCD5701 Gate Drivers include accurate Under-Voltage Lockout (UVLO), Desaturation Protection (DESAT), and Active Low FAULT output.

Технические параметры

Brand: onsemi
Factory Pack Quantity: 2500
Fall Time: 19 ns
Manufacturer: onsemi
Maximum Operating Temperature: +125 C
Maximum Turn-Off Delay Time: 75 ns
Maximum Turn-On Delay Time: 75 ns
Minimum Operating Temperature: -40 C
Mounting Style: SMD/SMT
Number of Drivers: 1 Driver
Number of Outputs: 1 Output
Operating Supply Current: 10 uA
Output Current: 4 A
Output Voltage: 800 mV, 14.1 V
Package/Case: SOIC-8
Pd - Power Dissipation: 700 mW
Product Category: Gate Drivers
Product Type: Gate Drivers
Product: IGBT, MOSFET Gate Drivers
Rise Time: 18 ns
Shutdown: Shutdown
Subcategory: PMIC-Power Management ICs
Supply Voltage - Max: 30 V
Supply Voltage - Min: 20 V
Technology: Si
Type: Half-Bridge

Техническая документация

Datasheet
pdf, 414 КБ
Datasheet
pdf, 416 КБ

Дополнительная информация

Калькуляторы группы «Переключатели распределения питания, драйверы нагрузки»
Типы корпусов импортных микросхем