SSM3J332R.LF
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см. техническую документацию
см. техническую документацию
30 шт. со склада г.Москва, срок 3-4 дня
6 руб.
Мин. кол-во для заказа 30 шт.
Добавить в корзину 30 шт.
на сумму 180 руб.
Альтернативные предложения4
Описание
Транзисторы
P-канал 30V 6A (Ta) 1W (Ta) поверхностный монтаж SOT-23F
Технические параметры
| Корпус | sot23 | |
| кол-во в упаковке | 3000 | |
| Base Product Number | TD62083 -> | |
| Current - Continuous Drain (Id) @ 25В°C | 6A (Ta) | |
| Drain to Source Voltage (Vdss) | 30V | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 10V | |
| ECCN | EAR99 | |
| FET Type | P-Channel | |
| Gate Charge (Qg) (Max) @ Vgs | 8.2nC @ 4.5V | |
| HTSUS | 8541.29.0095 | |
| Input Capacitance (Ciss) (Max) @ Vds | 560pF @ 15V | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Mounting Type | Surface Mount | |
| Operating Temperature | 150В°C (TJ) | |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® | |
| Package / Case | SOT-23-3 Flat Leads | |
| Power Dissipation (Max) | 1W (Ta) | |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 5A, 10V | |
| RoHS Status | RoHS Compliant | |
| Series | U-MOSVI -> | |
| Supplier Device Package | SOT-23F | |
| Technology | MOSFET (Metal Oxide) | |
| Vgs (Max) | В±12V | |
| Vgs(th) (Max) @ Id | 1.2V @ 1mA | |
| Continuous Drain Current (Id) @ 25В°C | 6A | |
| Power Dissipation-Max (Ta=25В°C) | 1W | |
| Rds On - Drain-Source Resistance | 42mО© @ 5A,10V | |
| Transistor Polarity | P Channel | |
| Vds - Drain-Source Breakdown Voltage | 30V | |
| Vgs - Gate-Source Voltage | 1.2V @ 1mA | |
| Automotive | No | |
| Channel Mode | Enhancement | |
| Channel Type | P | |
| Configuration | Single | |
| ECCN (US) | EAR99 | |
| EU RoHS | Compliant | |
| Lead Shape | Flat | |
| Material | Si | |
| Maximum Continuous Drain Current (A) | 6 | |
| Maximum Drain Source Resistance (mOhm) | 42 10V | |
| Maximum Drain Source Voltage (V) | 30 | |
| Maximum Gate Source Voltage (V) | ±12 | |
| Maximum Operating Temperature (°C) | 150 | |
| Maximum Power Dissipation (mW) | 1000 | |
| Minimum Operating Temperature (°C) | -55 | |
| Mounting | Surface Mount | |
| Number of Elements per Chip | 1 | |
| Packaging | Tape and Reel | |
| Part Status | Active | |
| PCB changed | 3 | |
| Pin Count | 3 | |
| PPAP | No | |
| Product Category | Power MOSFET | |
| Standard Package Name | SOT | |
| Supplier Package | SOT-23F | |
| Typical Gate Charge @ Vgs (nC) | 8.2 4.5V | |
| Typical Input Capacitance @ Vds (pF) | 860 15V | |
| Brand | Toshiba | |
| Factory Pack Quantity | 3000 | |
| Id - Continuous Drain Current | -6 A | |
| Manufacturer | Toshiba | |
| Mounting Style | SMD/SMT | |
| Number of Channels | 1 Channel | |
| Pd - Power Dissipation | 1 W | |
| RoHS | Details | |
| Transistor Type | 1 P-Channel | |
| Unit Weight | 0.050717 oz | |
| Вес, г | 0.037 |
Техническая документация
Datasheet SSM3J332R,LF
pdf, 345 КБ
Datasheet SSM3J332R,LF
pdf, 343 КБ
Datasheet SSM3J332R,LF
pdf, 412 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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