C3M0075120J, MOSFET SIC MOSFET 1200V 75 mOhm TO-263-7

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3270 шт., срок 6-8 недель

4 500 руб.

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Альтернативные предложения2

Номенклатурный номер: 8008938859

Артикул: C3M0075120J

Бренд: WOLFSPEED

Wolfspeed extends its leadership in SiC technology by introducing advanced SiC MOSFET technology in new low inductance discrete packing.

Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	30 A
Maximum Drain Source Resistance	75 mΩ
Maximum Drain Source Voltage	1200 V
Maximum Gate Source Voltage	-8 V, 19 V
Maximum Gate Threshold Voltage	3.6V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	113.6 W
Minimum Gate Threshold Voltage	1.8V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	TO-263-7
Pin Count	7
Transistor Configuration	Single
Transistor Material	SiC
Typical Gate Charge @ Vgs	48 nC @ 4/15V
Width	9.12mm
Continuous Drain Current (Id)	30A
Drain Source On Resistance (RDS(on)@Vgs,Id)	90mΩ@20A, 15V
Drain Source Voltage (Vdss)	1.2kV
Gate Threshold Voltage (Vgs(th)@Id)	4V@5mA
Input Capacitance (Ciss@Vds)	1.35nF@1000V
Operating Temperature	-55℃~+150℃@(Tj)
Power Dissipation (Pd)	113.6W
Total Gate Charge (Qg@Vgs)	51nC@15V
Type	null
Вес, г	1.6