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VN0104N3-G

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370 руб.

от 2 шт. — 280 руб.

от 5 шт. — 218 руб.

от 10 шт. — 194.04 руб.

Добавить в корзину 1 шт. на сумму 370 руб.

Номенклатурный номер: 8009347230

Бренд: Microchip Technology

Описание

Электроэлемент

D-MOSFET, N-CH, 0.35A, 40V, TO-92-3; Transistor Polarity:N Channel; Continuous Drain Current Id:350mA; Drain Source Voltage Vds:40V; On Resistance Rds(on):2.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4V;

Технические параметры

Channel Mode	Enhancement
Continuous Drain Current	0.35(A)
Drain-Source On-Volt	40(V)
Gate-Source Voltage (Max)	±20(V)
Mounting	Through Hole
Number of Elements	1
Operating Temp Range	-55C to 150C
Operating Temperature Classification	Military
Package Type	TO-92
Packaging	Bag
Pin Count	3
Polarity	N
Power Dissipation	1(W)
Rad Hardened	No
Type	Power MOSFET
Brand:	Microchip Technology
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1000
Fall Time:	5 ns
Forward Transconductance - Min:	300 mmho
Id - Continuous Drain Current:	350 mA
Manufacturer:	Microchip
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-92-3
Packaging:	Bulk
Pd - Power Dissipation:	1 W
Product Category:	MOSFET
Product Type:	MOSFET
Rds On - Drain-Source Resistance:	3 Ohms
Rise Time:	5 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Type:	FET
Typical Turn-Off Delay Time:	6 ns
Typical Turn-On Delay Time:	3 ns
Vds - Drain-Source Breakdown Voltage:	40 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	800 mV
Вес, г	0.22