Корпус	DPAK/TO-252AA
Brand	STMicroelectronics
Collector- Base Voltage VCBO	100 V
Collector- Emitter Voltage VCEO Max	100 V
Collector-Emitter Saturation Voltage	1.2 V
Configuration	Single
Continuous Collector Current	3 A
DC Collector/Base Gain hfe Min	20
Emitter- Base Voltage VEBO	5 V
Factory Pack Quantity	2500
Height	2.4 mm(Max)
Length	6.6 mm(Max)
Manufacturer	STMicroelectronics
Maximum DC Collector Current	3 A
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-65 C
Mounting Style	SMD/SMT
Package / Case	TO-252-3
Packaging	Reel
Pd - Power Dissipation	15 W
Product Category	Bipolar Transistors-BJT
RoHS	Details
Series	MJD31CT4
Transistor Polarity	NPN
Width	6.2 mm(Max)
Maximum Collector Base Voltage	100 V
Maximum Collector Emitter Voltage	100 V
Maximum Emitter Base Voltage	5 V
Maximum Power Dissipation	15 W
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	DPAK(TO-252)
Pin Count	3
Transistor Configuration	Single
Transistor Type	NPN
Brand:	STMicroelectronics
Collector- Base Voltage VCBO:	100 V
Collector- Emitter Voltage VCEO Max:	100 V
Collector-Emitter Saturation Voltage:	1.2 V
Configuration:	Single
Continuous Collector Current:	3 A
DC Collector/Base Gain hFE Min:	20
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity: Factory Pack Quantity:	2500
Manufacturer:	STMicroelectronics
Maximum DC Collector Current:	3 A
Maximum Operating Temperature:	+150 C
Mounting Style:	SMD/SMT
Package/Case:	TO-252-3
Pd - Power Dissipation:	15 W
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	MJD31C
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Вес, г	0.54

MJD31CT4, Биполярный транзистор, NPN, 100 В, 3 А, 15 Вт

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