STT4P3LLH6
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см. техническую документацию
см. техническую документацию
327 шт. со склада г.Москва, срок 6-7 дней
500 руб.
от 2 шт. —
410 руб.
от 5 шт. —
342 руб.
от 10 шт. —
316.26 руб.
Добавить в корзину 1 шт.
на сумму 500 руб.
Альтернативные предложения1
Описание
Электроэлемент
MOSFET, P-CH, -30V, -4A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-4A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.048ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V;
Технические параметры
| Brand | STMicroelectronics |
| Channel Mode | Enhancement |
| Configuration | 1 P-Channel |
| Factory Pack Quantity | 3000 |
| Fall Time | 3.4 ns |
| Id - Continuous Drain Current | -4 A |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +150 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SOT-23-6 |
| Packaging | Reel |
| Pd - Power Dissipation | 1.6 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 6 nC |
| Rds On - Drain-Source Resistance | 48 mOhms |
| Rise Time | 5 ns |
| RoHS | Details |
| Series | P-channel STripFET |
| Technology | Si |
| Transistor Polarity | P-Channel |
| Transistor Type | 1 P-Channel |
| Typical Turn-Off Delay Time | 19.2 ns |
| Typical Turn-On Delay Time | 5.4 ns |
| Vds - Drain-Source Breakdown Voltage | -30 V |
| Vgs - Gate-Source Voltage | +/-20 V |
| Vgs th - Gate-Source Threshold Voltage | -2.5 V |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 3.4 ns |
| Id - Continuous Drain Current: | 4 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-23-6 |
| Pd - Power Dissipation: | 1.6 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 6 nC |
| Rds On - Drain-Source Resistance: | 56 mOhms |
| Rise Time: | 5 ns |
| Series: | STT4P3LLH6 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | STripFET |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel Power MOSFET |
| Typical Turn-Off Delay Time: | 19.2 ns |
| Typical Turn-On Delay Time: | 5.4 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Вес, г | 2.3 |
Техническая документация
Datasheet
pdf, 416 КБ
Datasheet STT4P3LLH6
pdf, 435 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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