STU2N105K5
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см. техническую документацию
см. техническую документацию
6 шт. со склада г.Москва, срок 6-7 дней
780 руб.
от 2 шт. —
650 руб.
от 5 шт. —
583 руб.
Добавить в корзину 1 шт.
на сумму 780 руб.
Альтернативные предложения2
Описание
Электроэлемент
MOSFET N-channel 1050 V, 6 Ohm typ 1.5 A MDmesh K5 Power MOSFET in IPAK package
Технические параметры
Brand | STMicroelectronics |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 3000 |
Fall Time | 38.5 ns |
Id - Continuous Drain Current | 1.5 A |
Manufacturer | STMicroelectronics |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | Through Hole |
Number of Channels | 1 Channel |
Package / Case | TO-251-3 |
Packaging | Tube |
Pd - Power Dissipation | 60 W |
Product Category | MOSFET |
Qg - Gate Charge | 10 nC |
Rds On - Drain-Source Resistance | 8 Ohms |
Rise Time | 8.5 ns |
RoHS | Details |
Series | MDmesh K5 |
Technology | Si |
Transistor Polarity | N-Channel |
Typical Turn-Off Delay Time | 35 ns |
Typical Turn-On Delay Time | 14.5 ns |
Vds - Drain-Source Breakdown Voltage | 1050 V |
Vgs - Gate-Source Voltage | 30 V |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Brand: | STMicroelectronics |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Fall Time: | 38.5 ns |
Id - Continuous Drain Current: | 1.5 A |
Manufacturer: | STMicroelectronics |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package/Case: | TO-251-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 60 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 10 nC |
Rds On - Drain-Source Resistance: | 8 Ohms |
Rise Time: | 8.5 ns |
Series: | STU2N105K5 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | MDmesh |
Transistor Polarity: | N-Channel |
Typical Turn-Off Delay Time: | 35 ns |
Typical Turn-On Delay Time: | 14.5 ns |
Vds - Drain-Source Breakdown Voltage: | 1.05 kV |
Vgs - Gate-Source Voltage: | -30 V, +30 V |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Техническая документация
Datasheet
pdf, 1180 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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