TBC847B.LM
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8855 шт. со склада г.Москва
6 руб.
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Описание
Транзисторы и сборки биполярные
Описание Транзистор биполярный TO236
Технические параметры
Корпус | to236 | |
кол-во в упаковке | 1 | |
Base Product Number | CUS10 -> | |
Current - Collector (Ic) (Max) | 150mA | |
Current - Collector Cutoff (Max) | 30nA (ICBO) | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V | |
ECCN | EAR99 | |
Frequency - Transition | 100MHz | |
HTSUS | 8541.21.0075 | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Mounting Type | Surface Mount | |
Operating Temperature | 150В°C (TJ) | |
Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Power - Max | 320mW | |
RoHS Status | RoHS Compliant | |
Supplier Device Package | SOT-23 | |
Transistor Type | NPN | |
Vce Saturation (Max) @ Ib, Ic | 400mV @ 100mA, 5mA | |
Voltage - Collector Emitter Breakdown (Max) | 50V | |
Brand | Toshiba | |
Collector- Base Voltage VCBO | 60 V | |
Collector- Emitter Voltage VCEO Max | 50 V | |
Collector-Emitter Saturation Voltage | 170 mV | |
Configuration | Single | |
Continuous Collector Current | 150 mA | |
DC Collector/Base Gain hfe Min | 200 at 2 mA, 5 V | |
DC Current Gain hFE Max | 450 at 2 mA, 5 V | |
Emitter- Base Voltage VEBO | 6 V | |
Factory Pack Quantity | 3000 | |
Gain Bandwidth Product fT | 100 MHz | |
Manufacturer | Toshiba | |
Maximum DC Collector Current | 150 mA | |
Maximum Operating Temperature | +150 C | |
Mounting Style | SMD/SMT | |
Packaging | Reel | |
Pd - Power Dissipation | 320 mW | |
Product Category | Bipolar Transistors-BJT | |
RoHS | Details | |
Series | TBC8X7 | |
Technology | Si | |
Transistor Polarity | NPN | |
Unit Weight | 0.000282 oz | |
Automotive | No | |
ECCN (US) | EAR99 | |
EU RoHS | Compliant | |
Lead Shape | Gull-wing | |
Material | Si | |
Maximum Base Emitter Saturation Voltage (V) | 0.9(Typ)@5mA@100mA|0.7(Typ)@0.5mA@10mA | |
Maximum Collector Base Voltage (V) | 60 | |
Maximum Collector Cut-Off Current (nA) | 30 | |
Maximum Collector-Emitter Saturation Voltage (V) | 0.4@5mA@100mA|0.2@0.5mA@10mA | |
Maximum Collector-Emitter Voltage (V) | 50 | |
Maximum DC Collector Current (A) | 0.15 | |
Maximum Emitter Base Voltage (V) | 6 | |
Maximum Operating Temperature (°C) | 150 | |
Maximum Power Dissipation (mW) | 320 | |
Maximum Transition Frequency (MHz) | 100(Min) | |
Minimum DC Current Gain | 200@2mA@5V | |
Minimum Operating Temperature (°C) | -55 | |
Mounting | Surface Mount | |
Number of Elements per Chip | 1 | |
Part Status | Active | |
PCB changed | 3 | |
Pin Count | 3 | |
PPAP | No | |
Standard Package Name | SOT | |
Supplier Package | SOT-23 | |
Type | NPN | |
Вес, г | 0.03 |
Техническая документация
Datasheet
pdf, 192 КБ
Datasheet TBC847B,LM
pdf, 188 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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