SiC N-Channel MOSFET, 11 A, 900 V, 7-Pin D2PAK C3M0280090J

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Номенклатурный номер: 8014519671

Артикул: C3M0280090J

Бренд: WOLFSPEED

Semiconductors\Discrete Semiconductors\MOSFETs

Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 900-V MOSFET platform.

Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	11 A
Maximum Drain Source Resistance	280 mΩ
Maximum Drain Source Voltage	900 V
Maximum Gate Source Voltage	-8 V, 18 V
Maximum Gate Threshold Voltage	3.5V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	50 W
Minimum Gate Threshold Voltage	1.8V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	TO-263-7
Pin Count	7
Transistor Configuration	Single
Transistor Material	SiC
Typical Gate Charge @ Vgs	9.5 nC @ 4/15V
Width	9.12mm
Brand	Cree, Inc.
Configuration	Single
Fall Time	4 ns
Forward Transconductance - Min	3.1 S
Id - Continuous Drain Current	11 A
Manufacturer	Cree, Inc.
Mounting Style	Through Hole
Number of Channels	1 Channel
Package / Case	D2PAK-7
Packaging	Tube
Pd - Power Dissipation	50 W
Product Category	MOSFET
Qg - Gate Charge	9.5 nC
Rds On - Drain-Source Resistance	385 mOhms
Rise Time	6.5 ns
RoHS	Details
Technology	SiC
Transistor Polarity	N-Channel
Typical Turn-Off Delay Time	11 ns
Typical Turn-On Delay Time	10.5 ns
Vds - Drain-Source Breakdown Voltage	900 V
Vgs - Gate-Source Voltage	-8 V, +18 V
Vgs th - Gate-Source Threshold Voltage	1.8 V
Вес, г	1