AS4C4M16SA-7BCN, SDRAM 64Mbit Surface Mount, 200MHz, 3 V to 3.6 V, 54-Pin FBGA
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Описание
Semiconductors\Memory Chips\SDRAM
The Alliance Memory 64Mb SDRAM is a high-speed CMOS synchronous DRAM containing 64 Mbits. It is internally configured as 4 Banks of 1M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK).
Технические параметры
Address Bus Width | 12bit |
Data Bus Width | 16bit |
Data Rate | 200MHz |
Maximum Operating Supply Voltage | 3.6 V |
Maximum Operating Temperature | +70 °C |
Maximum Random Access Time | 5.4ns |
Memory Size | 64Mbit |
Minimum Operating Supply Voltage | 3 V |
Minimum Operating Temperature | 0 °C |
Mounting Type | Surface Mount |
Number of Bits per Word | 16bit |
Number of Words | 4M |
Organisation | 4M x 16 |
Package Type | FBGA |
Pin Count | 54 |
SDRAM Class | DDR |
Width | 8.0mm |
Access Time | 5.4ns |
Clock Frequency | 143MHz |
ECCN | EAR99 |
HTSUS | 8542.32.0002 |
Memory Format | DRAM |
Memory Interface | Parallel |
Memory Type | Volatile |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Operating Temperature | 0В°C ~ 70В°C (TA) |
Package | Tray |
Package / Case | 54-TFBGA |
REACH Status | REACH Unaffected |
RoHS Status | ROHS3 Compliant |
Supplier Device Package | 54-TFBGA (8x8) |
Technology | SDRAM |
Voltage - Supply | 3V ~ 3.6V |
Write Cycle Time - Word, Page | 2ns |
Техническая документация
Datasheet
pdf, 1295 КБ
Дополнительная информация
Калькуляторы группы «Микросхемы памяти»
Типы корпусов импортных микросхем
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