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N-Channel MOSFET, 36 A, 650 V, 7-Pin D2PAK C3M0060065J

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44 шт., срок 6 недель

4 650 руб.

Добавить в корзину 1 шт. на сумму 4 650 руб.

Альтернативные предложения2

Номенклатурный номер: 8014777188

Артикул: C3M0060065J

Бренд: WOLFSPEED

Описание

Semiconductors\Discrete Semiconductors\MOSFETs

The Wolfspeed Silicon Carbide Power MOSFET C3MTM MOSFET Technology is in N-Channel Enhancement Mode. The wolfspeeds Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs is a range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency.

Технические параметры

Channel Type	N
Maximum Continuous Drain Current	36 A
Maximum Drain Source Voltage	650 V
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	TO-263-7
Pin Count	7
Brand:	Wolfspeed
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	50
Fall Time:	6 ns
Forward Transconductance - Min:	10 S
Id - Continuous Drain Current:	36 A
Manufacturer:	Wolfspeed
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-40 C
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	TO-263-7
Packaging:	Tube
Pd - Power Dissipation:	136 W
Product Category:	MOSFET
Product Type:	MOSFET
Product:	MOSFET
Qg - Gate Charge:	46 nC
Rds On - Drain-Source Resistance:	60 mOhms
Rise Time:	8 ns
Subcategory:	MOSFETs
Technology:	SiC
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	17 ns
Typical Turn-On Delay Time:	9 ns
Vds - Drain-Source Breakdown Voltage:	650 V
Vgs - Gate-Source Voltage:	-4 V, +15 V
Vgs th - Gate-Source Threshold Voltage:	3.6 V
Вес, г	1