STGF15H60DF, TO-220 IGBTs ROHS
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50 шт., срок 6 недель
370 руб.
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Описание
IGBT V Series
STMicroelectronics 600V trench-gate field-stop very high-speed IGBT V series features the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz), and simplified thermal and EMI design.
STMicroelectronics 600V trench-gate field-stop very high-speed IGBT V series features the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz), and simplified thermal and EMI design.
Технические параметры
| Collector Emitter Saturation Voltage | 1.6В |
| Collector Emitter Voltage Max | 600В |
| Continuous Collector Current | 30А |
| Power Dissipation | 30Вт |
| Количество Выводов | 3вывод(-ов) |
| Линейка Продукции | H |
| Максимальная Рабочая Температура | 175°C |
| Монтаж транзистора | Through Hole |
| Стиль Корпуса Транзистора | TO-220FP |
| Brand: | STMicroelectronics |
| Collector- Emitter Voltage VCEO Max: | 600 V |
| Collector-Emitter Saturation Voltage: | 1.6 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 30 A |
| Continuous Collector Current Ic Max: | 15 A |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Gate-Emitter Leakage Current: | 250 nA |
| Manufacturer: | STMicroelectronics |
| Maximum Gate Emitter Voltage: | -20 V, +20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 FP |
| Packaging: | Tube |
| Pd - Power Dissipation: | 30 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Series: | STGF15H60DF |
| Subcategory: | IGBTs |
| Technology: | Si |
| Brand | STMicroelectronics |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Collector-Emitter Saturation Voltage | 1.6 V |
| Configuration | Single |
| Continuous Collector Current at 25 C | 30 A |
| Continuous Collector Current Ic Max | 15 A |
| Factory Pack Quantity | 1000 |
| Gate-Emitter Leakage Current | 250 nA |
| Manufacturer | STMicroelectronics |
| Maximum Gate Emitter Voltage | +/-20 V |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Package / Case | TO-220-3 FP |
| Packaging | Tube |
| Pd - Power Dissipation | 30 W |
| Product Category | IGBT Transistors |
| RoHS | Details |
| Series | 600-650V IGBTs |
| Technology | Si |
| Вес, г | 2.43 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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