MJ15016G
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Описание
Электроэлемент
TRANSISTOR, PNP, TO-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:120V; Transition Frequency ft:18MHz; Power Dissipation Pd:180W; DC Collector Current:15A; DC Current Gain hFE:70hFE; Transistor Case Style:TO-3; No. of Pins:2Pins; Operating Temperature Max:200°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Alternate Case Style:TO-204AA; Collector Emitter Saturation Voltage Vce(on):-1.1V; Continuous Collector Current Ic Max:15A; Current Ic Continuous a Max:15A; Current Ic hFE:4A; Device Marking:MJ15016G; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:2.2MHz; Gain Bandwidth ft Typ:18MHz; Hfe Min:20; No. of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +200°C; Power Dissipation Ptot Max:180W; Voltage Vcbo:200V
Технические параметры
Category | Bipolar Power |
Collector Current (DC) | 15(A) |
Collector Current (DC) (Max) | 15 A |
Collector-Base Voltage | 200(V) |
Collector-Emitter Voltage | 120(V) |
Configuration | Single |
DC Current Gain | 10 |
DC Current Gain (Min) | 10 |
Emitter-Base Voltage | 7(V) |
Frequency | 18(MHz) |
Frequency (Max) | 18 MHz |
Mounting | Through Hole |
Number of Elements | 1 |
Operating Temp Range | -65C to 200C |
Operating Temperature Classification | Military |
Output Power | Not Required(W) |
Package Type | TO-3 |
Packaging | Tray |
Pin Count | 2+Tab |
Power Dissipation | 115(W) |
Rad Hardened | No |
Transistor Polarity | PNP |
Maximum Collector Emitter Saturation Voltage | 5 V |
Maximum Operating Temperature | +200 °C |
Maximum Operating Frequency | 1 MHz |
Number of Elements per Chip | 1 |
Length | 39.37mm |
Maximum Collector Base Voltage | 200 V |
Transistor Configuration | Single |
Brand | ON Semiconductor |
Maximum Collector Emitter Voltage | 120 V |
Maximum Power Dissipation | 180 W |
Mounting Type | Through Hole |
Minimum Operating Temperature | -65 °C |
Width | 26.67mm |
Maximum DC Collector Current | 15 A |
Transistor Type | PNP |
Height | 8.51mm |
Dimensions | 39.37 x 26.67 x 8.51mm |
Maximum Emitter Base Voltage | 7 V |
Minimum DC Current Gain | 5 |
Вес, г | 18.5 |
Техническая документация
Документация
pdf, 179 КБ
Дополнительная информация
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Типы корпусов импортных транзисторов и тиристоров
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