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SiC N-Channel MOSFET, 63 A, 1200 V, 4-Pin TO-247-4 C3M0032120K

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3 шт., срок 6 недель

13 750 руб.

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Альтернативные предложения2

Номенклатурный номер: 8017089359

Артикул: C3M0032120K

Бренд: WOLFSPEED

Описание

Semiconductors\Discrete Semiconductors\MOSFETs

1200V VBR (minimum) across entire operating temperature range [-40˚C – 175˚C] +15V gate drive voltage

Технические параметры

Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	63 A
Maximum Drain Source Resistance	32 mΩ
Maximum Drain Source Voltage	1200 V
Maximum Gate Source Voltage	-8 V, 19 V
Maximum Gate Threshold Voltage	3.6V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	283 W
Minimum Gate Threshold Voltage	1.8V
Minimum Operating Temperature	-40 °C
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-247-4
Pin Count	4
Transistor Configuration	Single
Transistor Material	SiC
Typical Gate Charge @ Vgs	118 nC @ 4/15V
Width	5.21mm
Brand:	Wolfspeed
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	30
Fall Time:	9 ns
Forward Transconductance - Min:	27 S
Id - Continuous Drain Current:	63 A
Manufacturer:	Wolfspeed
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-40 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-247-4
Packaging:	Tube
Pd - Power Dissipation:	283 W
Product Category:	MOSFET
Product Type:	MOSFET
Product:	MOSFET
Qg - Gate Charge:	118 nC
Rds On - Drain-Source Resistance:	32 mOhms
Rise Time:	18 ns
Subcategory:	MOSFETs
Technology:	SiC
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	32 ns
Typical Turn-On Delay Time:	25 ns
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Vgs - Gate-Source Voltage:	-4 V, +15 V
Vgs th - Gate-Source Threshold Voltage:	3.6 V
Automotive	Unknown
Configuration	Single Dual Source
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Lead Shape	Through Hole
Material	SiC
Maximum Continuous Drain Current (A)	63
Maximum Drain Source Resistance (mOhm)	43@15V
Maximum Drain Source Voltage (V)	1200
Maximum Gate Source Leakage Current (nA)	250
Maximum Gate Source Voltage (V)	15
Maximum Gate Threshold Voltage (V)	3.6
Maximum IDSS (uA)	50
Maximum Operating Temperature (°C)	175
Maximum Positive Gate Source Voltage (V)	15
Maximum Power Dissipation (mW)	283000
Maximum Pulsed Drain Current @ TC=25°C (A)	120
Minimum Gate Threshold Voltage (V)	1.8
Minimum Operating Temperature (°C)	-40
Mounting	Through Hole
Operating Junction Temperature (°C)	-40 to 175
Packaging	Tube
Part Status	Active
PCB changed	4
PPAP	Unknown
Process Technology	C3M
Product Category	Power MOSFET
Standard Package Name	TO
Supplier Package	TO-247
Tab	Tab
Typical Diode Forward Voltage (V)	4.6
Typical Fall Time (ns)	9
Typical Gate Charge @ Vgs (nC)	118@15V
Typical Gate Plateau Voltage (V)	6.5
Typical Gate Threshold Voltage (V)	2.5
Typical Gate to Drain Charge (nC)	34
Typical Gate to Source Charge (nC)	40
Typical Input Capacitance @ Vds (pF)	3357@1000V
Typical Output Capacitance (pF)	129
Typical Reverse Recovery Charge (nC)	478
Typical Reverse Recovery Time (ns)	27
Typical Reverse Transfer Capacitance @ Vds (pF)	8@1000V
Typical Rise Time (ns)	18
Typical Turn-Off Delay Time (ns)	32
Typical Turn-On Delay Time (ns)	25
Вес, г	1