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SiC N-Channel MOSFET, 30 A, 1200 V, 4-Pin TO-247-4 C3M0075120K

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24 шт., срок 6 недель

7 460 руб.

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Альтернативные предложения2

Номенклатурный номер: 8017145640

Артикул: C3M0075120K

Бренд: WOLFSPEED

Описание

Semiconductors\Discrete Semiconductors\MOSFETs

Wolfspeed extends its leadership in SiC technology by introducing advanced SiC MOSFET technology in new low inductance discrete packing.

Технические параметры

Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	30 A
Maximum Drain Source Resistance	75 mΩ
Maximum Drain Source Voltage	1200 V
Maximum Gate Source Voltage	-8 V, 19 V
Maximum Gate Threshold Voltage	3.6V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	113.6 W
Minimum Gate Threshold Voltage	1.8V
Minimum Operating Temperature	-55 °C
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-247-4
Pin Count	4
Transistor Configuration	Single
Transistor Material	SiC
Typical Gate Charge @ Vgs	53 nC @ 4/15V
Width	5.21mm
Automotive	Unknown
Configuration	Single Dual Source
ECCN (US)	EAR99
Lead Shape	Through Hole
Material	SiC
Maximum Continuous Drain Current (A)	32
Maximum Drain Source Resistance (mOhm)	90@15V
Maximum Drain Source Voltage (V)	1200
Maximum Gate Source Leakage Current (nA)	250
Maximum Gate Source Voltage (V)	15
Maximum Gate Threshold Voltage (V)	3.6
Maximum IDSS (uA)	50
Maximum Operating Temperature (°C)	150
Maximum Positive Gate Source Voltage (V)	15
Maximum Power Dissipation (mW)	113600
Maximum Pulsed Drain Current @ TC=25°C (A)	123
Minimum Gate Threshold Voltage (V)	1.8
Minimum Operating Temperature (°C)	-55
Mounting	Through Hole
Operating Junction Temperature (°C)	-55 to 150
Packaging	Tube
Part Status	Active
PCB changed	4
PPAP	Unknown
Process Technology	C3M
Product Category	Power MOSFET
Standard Package Name	TO
Supplier Package	TO-247
Supplier Temperature Grade	Industrial
Tab	Tab
Typical Diode Forward Voltage (V)	4.5
Typical Drain Source Resistance @ 25°C (mOhm)	75@15V
Typical Fall Time (ns)	10
Typical Gate Charge @ Vgs (nC)	53@15V
Typical Gate Plateau Voltage (V)	7.5
Typical Gate Threshold Voltage (V)	2.5
Typical Gate to Drain Charge (nC)	18
Typical Gate to Source Charge (nC)	17
Typical Input Capacitance @ Vds (pF)	1390@1000V
Typical Output Capacitance (pF)	58
Typical Reverse Recovery Charge (nC)	254
Typical Reverse Recovery Time (ns)	20
Typical Reverse Transfer Capacitance @ Vds (pF)	2@1000V
Typical Rise Time (ns)	14
Typical Turn-Off Delay Time (ns)	38
Typical Turn-On Delay Time (ns)	30
Вес, г	1