BIDW20N60T, IGBT Transistors IGBT Discrete 600V, 20A in TO-247
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
Model BID Insulated Gate Bipolar TransistorsBourns Model BID Insulated Gate Bipolar Transistors (IGBTs) combine technology from a MOSFET gate and a bipolar transistor and are designed for high voltage/high current applications. The Model BID IGBTs use advanced Trench-Gate Field-Stop technology to provide greater control of the dynamic characteristics, resulting in a lower Collector-Emitter Saturation Voltage and fewer switching losses. The IGBTs feature a -55°C to +150°C operating temperature range and are available in TO-252, TO-247, and TO-247N packages. These thermally efficient components provide a lower thermal resistance making them suitable IGBT solutions for Switch-Mode Power Supplies (SMPS), Uninterruptible Power Sources (UPS), and Power Factor Correction (PFC) applications.
Технические параметры
Brand: | Bourns |
Collector- Emitter Voltage VCEO Max: | 600 V |
Collector-Emitter Saturation Voltage: | 1.7 V |
Configuration: | Single |
Continuous Collector Current at 25 C: | 40 A |
Continuous Collector Current Ic Max: | 40 A |
Factory Pack Quantity: Factory Pack Quantity: | 30 |
Gate-Emitter Leakage Current: | 400 nA |
Manufacturer: | Bourns |
Maximum Gate Emitter Voltage: | -20 V, +20 V |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Package / Case: | TO-247-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 192 W |
Product Category: | IGBT Transistors |
Product Type: | IGBT Transistors |
Series: | BID |
Subcategory: | IGBTs |
Technology: | Si |
Configuration | Single Diode |
Maximum Collector Emitter Voltage | 600 V |
Maximum Continuous Collector Current | 20 A |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 192 W |
Number of Transistors | 1 |
Package Type | TO-247 |
Вес, г | 1 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов