STGSB200M65DF2AG, IGBT Transistors Automotive-grade trench gate field-stop, 650 V, 200 A low-loss M series IGBT

MDmesh™ M6 MOSFETs
STMicroelectronics MDmesh™ M6 MOSFETs combine a low gate charge (Q g ) with an optimized capacitance profile to target high efficiency on new topologies in power conversion applications. The super-junction MDmesh M6 series offers extremely high-efficiency performance resulting in increased power density and a low gate charge for high frequencies. The M6 series MOSFETs have a breakdown voltage ranging from 600 to 700V. They are available in a wide range of packaging options, including a TO-Leadless (TO-LL) package solution, allowing efficient thermal management. The devices include a wide range of operating voltages for industrial applications, including chargers, adapters, silver box modules, LED lighting, telecom, server, and solar.