FS200R12N3T7BPSA1, IGBT Modules LOW POWER ECONO

FS200R12N3T7BPSA1, IGBT Modules LOW POWER ECONO
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Номенклатурный номер: 8020335454
Артикул: FS200R12N3T7BPSA1

Описание

Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules
1200V Sixpack IGBT Modules

Infineon 1200V Sixpack IGBT Modules are EasyPACK™ 1B sixpack IGBT modules with TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode, and NTC technology. This technology provides strongly reduced losses and provides a high level of controllability. The cell concept is characterized by implementing parallel trench cells separated by sub-micron mesas compared to the formerly used square trench cells. The chip is specially optimized for industrial drive applications and solar energy systems, which means much lower static losses, higher power density, and softer switching. A significant increase in power density can be obtained by raising the allowed maximum operating temperature up to 175°C in the Infineon 1200V Sixpack IGBT Modules.

Технические параметры

Brand: Infineon Technologies
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 1.55 V
Configuration: 6-Pack
Continuous Collector Current at 25 C: 200 A
Factory Pack Quantity: Factory Pack Quantity: 10
Gate-Emitter Leakage Current: 100 nA
Manufacturer: Infineon
Maximum Operating Temperature: +175 C
Minimum Operating Temperature: -40 C
Packaging: Tray
Part # Aliases: FS200R12N3T7 SP005337556
Product Category: IGBT Modules
Product Type: IGBT Modules
Product: IGBT Silicon Modules
Series: FSXR12N3X7G
Subcategory: IGBTs
Maximum Collector Emitter Voltage 1200 V
Maximum Continuous Collector Current 200 A
Maximum Gate Emitter Voltage 20V
Maximum Power Dissipation 20 mW

Техническая документация

Datasheet
pdf, 590 КБ
Datasheet
pdf, 1074 КБ

Дополнительная информация

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