STGWA60H65DFB, 375W 80A 650V Trench GrId Type FIeld Cutoff TO-247-3 IGBTs ROHS

STGWA60H65DFB, 375W 80A 650V Trench GrId Type FIeld Cutoff TO-247-3 IGBTs ROHS
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272 шт., срок 7 недель
810 руб.
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Номенклатурный номер: 8020694467
Артикул: STGWA60H65DFB
Бренд: STMicroelectronics

Описание

Latest Technologies in Power MOSFET and IGBT STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

Технические параметры

Brand: STMicroelectronics
Collector- Emitter Voltage VCEO Max: 650 V
Collector-Emitter Saturation Voltage: 2 V
Configuration: Single
Continuous Collector Current at 25 C: 80 A
Continuous Collector Current Ic Max: 80 A
Continuous Collector Current: 80 A
Factory Pack Quantity: 600
Gate-Emitter Leakage Current: 250 nA
Manufacturer: STMicroelectronics
Maximum Gate Emitter Voltage: -20 V, 20 V
Maximum Operating Temperature: +175 C
Minimum Operating Temperature: -55 C
Mounting Style: Through Hole
Operating Temperature Range: -55 C to+175 C
Package/Case: TO-247-3
Packaging: Tube
Pd - Power Dissipation: 375 W
Product Category: IGBT Transistors
Product Type: IGBT Transistors
Subcategory: IGBTs
Technology: Si
Вес, г 38

Техническая документация

Datasheet
pdf, 668 КБ

Дополнительная информация

Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов

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