C2M0040120D, MOSFET SiC Power MOSFET 1200V, 60A
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13 630 руб.
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
C2M™ SiC Power MOSFETsWolfspeed C2M™ SiC Power MOSFETs are 1200V and 1700V SiC MOSFETs with extremely fast switching speeds and ultra-low switching losses designed to replace silicon transistors (IGBTs). Used in conjunction with Wolfspeed SiC Schottky diodes in an all-SiC system, the C2M SiC MOSFETs allow design engineers to achieve levels of energy efficiency, size, and weight reduction. The C2M family of MOSFETs is based on the rugged and reliable Gen2 SiC technology platform, providing low switching losses and high switching frequencies while reducing the size of magnetics and filter components and significantly reducing cooling requirements.
Технические параметры
| Brand: | Wolfspeed |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| Fall Time: | 34.4 ns |
| Forward Transconductance - Min: | 13.2 S |
| Id - Continuous Drain Current: | 60 A |
| Manufacturer: | Wolfspeed |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-247-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 330 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | Power MOSFETs |
| Qg - Gate Charge: | 115 nC |
| Rds On - Drain-Source Resistance: | 40 mOhms |
| Rise Time: | 52 ns |
| Subcategory: | MOSFETs |
| Technology: | SiC |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | Silicon Carbide Power MOSFET |
| Typical Turn-Off Delay Time: | 26.4 ns |
| Typical Turn-On Delay Time: | 14.8 ns |
| Vds - Drain-Source Breakdown Voltage: | 1.2 kV |
| Vgs - Gate-Source Voltage: | -5 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Channel Mode | Enhancement |
| Channel Type | N |
| Forward Diode Voltage | 3.3V |
| Maximum Continuous Drain Current | 60 A |
| Maximum Drain Source Resistance | 52 mΩ |
| Maximum Drain Source Voltage | 1200 V |
| Maximum Gate Source Voltage | -5 V, +20 V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 330 W |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-247 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | SiC |
| Typical Gate Charge @ Vgs | 115 nC @ 20 V, 115 nC @ 5 V |
| Width | 5.21mm |
| корпус | TO-247 |
| Automotive | No |
| Configuration | Single |
| ECCN (US) | EAR99 |
| Material | SiC |
| Maximum Continuous Drain Current (A) | 55 |
| Maximum Drain Source Resistance (mOhm) | 52@20V |
| Maximum Drain Source Voltage (V) | 1200 |
| Maximum Gate Source Leakage Current (nA) | 250 |
| Maximum Gate Source Voltage (V) | 25 |
| Maximum Gate Threshold Voltage (V) | 2.8(Typ) |
| Maximum IDSS (uA) | 100 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 330000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Through Hole |
| Packaging | Tube |
| Part Status | Active |
| PCB changed | 3 |
| PPAP | No |
| Process Technology | C2M |
| Product Category | Power MOSFET |
| Standard Package Name | TO |
| Supplier Package | TO-247 |
| Supplier Temperature Grade | Industrial |
| Tab | Tab |
| Typical Fall Time (ns) | 34 |
| Typical Gate Charge @ Vgs (nC) | 115@20V |
| Typical Input Capacitance @ Vds (pF) | 1893@1000V |
| Typical Rise Time (ns) | 52 |
| Typical Turn-Off Delay Time (ns) | 26 |
| Typical Turn-On Delay Time (ns) | 15 |
| Вес, г | 4 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
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