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PMPB14R8XNX, MOSFET MOS DISCRETES

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2786 шт., срок 7-9 недель

150 руб.

от 10 шт. — 120 руб.

от 100 шт. — 76 руб.

от 1000 шт. — 40.82 руб.

Добавить в корзину 1 шт. на сумму 150 руб.

Номенклатурный номер: 8021502547

Артикул: PMPB14R8XNX

Бренд: Nexperia B.V.

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Small-Signal MOSFETs (SSMOS) for Portables
Nexperia Small-Signal MOSFETs (SSMOS) for Portables offer WLCSP and leadless DFN packages for mobile and portable applications. The Nexperia SSMOS packages provide an extremely small DFN solution in today's commonly used pitch size of 0.35mm. An ideal replacement solution where space is paramount, these ultra-small packages offer significant space efficiency while providing minimal effort on assembly adjustment. Available in both N-channel and P-channel, all parts are equipped with ESD protection of >2kV and with a high power capability of >1300mW.

Технические параметры

Brand:	Nexperia
Channel Mode:	Enhancement
Factory Pack Quantity: Factory Pack Quantity:	3000
Fall Time:	5 ns
Forward Transconductance - Min:	17.9 S
Id - Continuous Drain Current:	10 A
Manufacturer:	Nexperia
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	DFN2020M-6-8
Part # Aliases:	934665185115
Pd - Power Dissipation:	1 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	6.5 nC
Rds On - Drain-Source Resistance:	34.8 mOhms
Rise Time:	5 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	10 ns
Typical Turn-On Delay Time:	3 ns
Vds - Drain-Source Breakdown Voltage:	30 V
Vgs - Gate-Source Voltage:	-12 V, +12 V
Vgs th - Gate-Source Threshold Voltage:	900 mV