FS200R12N3T4RB81BPSA1, IGBT Modules LOW POWER ECONO

FS200R12N3T4RB81BPSA1, IGBT Modules LOW POWER ECONO
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52 740 руб.
от 10 шт.44 970 руб.
Добавить в корзину 1 шт. на сумму 52 740 руб.
Номенклатурный номер: 8021607433
Артикул: FS200R12N3T4RB81BPSA1

Описание

Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules
1200V CoolSiC™ Modules
Infineon Technologies 1200V CoolSiC™ Modules are Silicon Carbide (SiC) MOSFET modules that offer good levels of efficiency and system flexibility. These modules come with Near Threshold Circuits (NTC) and PressFIT contact technology. The CoolSiC modules feature high current density, best in class switching and conduction losses, and low inductive design. These modules provide high-frequency operation, increased power density, and optimized development cycle time and cost.

Технические параметры

Brand: Infineon Technologies
Factory Pack Quantity: Factory Pack Quantity: 10
Manufacturer: Infineon
Packaging: Tray
Part # Aliases: FS200R12N3T4R_B81 SP005431546
Product Category: IGBT Modules
Product Type: IGBT Modules
Series: FSXR12N3X4G
Subcategory: IGBTs

Техническая документация

Datasheet
pdf, 534 КБ

Дополнительная информация

Калькуляторы группы «IGBT модули»