BSS84DW-7-F, Транзистор: P-MOSFET x2, полевой, -50В, -0,13А, 0,3Вт, SOT363
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
87 руб.
73 руб.
от 25 шт. —
34 руб.
Добавить в корзину 1 шт.
на сумму 73 руб.
Описание
Описание Транзистор: P-MOSFET x2, полевой, -50В, -0,13А, 0,3Вт, SOT363 Характеристики
Категория | Диод |
Технические параметры
EU RoHS | Compliant |
ECCN (US) | EAR99 |
Part Status | Active |
HTS | 8541.29.00.95 |
Product Category | Small Signal |
Configuration | Dual |
Channel Mode | Enhancement |
Channel Type | P |
Number of Elements per Chip | 2 |
Maximum Drain Source Voltage (V) | 50 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Continuous Drain Current (A) | 0.13 |
Maximum Drain Source Resistance (mOhm) | 10000@5V |
Typical Input Capacitance @ Vds (pF) | 45(Max)@25V |
Maximum Power Dissipation (mW) | 300 |
Typical Turn-Off Delay Time (ns) | 18 |
Typical Turn-On Delay Time (ns) | 10 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Supplier Temperature Grade | Commercial |
Packaging | Tape and Reel |
Automotive | Yes |
AEC Qualified Number | AEC-Q101 |
Pin Count | 6 |
Standard Package Name | SOT |
Supplier Package | SOT-363 |
Military | No |
Mounting | Surface Mount |
Package Height | 1 |
Package Length | 2.15 |
Package Width | 1.3 |
PCB changed | 6 |
Lead Shape | Gull-wing |
Brand: | Diodes Incorporated |
Channel Mode: | Enhancement |
Configuration: | Dual |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Forward Transconductance - Min: | 0.05 S |
Id - Continuous Drain Current: | 130 mA |
Manufacturer: | Diodes Incorporated |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 2 Channel |
Package / Case: | SOT-363-6 |
Pd - Power Dissipation: | 300 mW |
Product Category: | MOSFET |
Product Type: | MOSFET |
Product: | MOSFET Small Signal |
Rds On - Drain-Source Resistance: | 10 Ohms |
Series: | BSS84 |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | P-Channel |
Transistor Type: | 2 P-Channel |
Type: | Enhancement Mode Field Effect Transistor |
Typical Turn-Off Delay Time: | 18 ns |
Typical Turn-On Delay Time: | 10 ns |
Vds - Drain-Source Breakdown Voltage: | 50 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 800 mV |
Вес, г | 0.01 |
Техническая документация
Datasheet
pdf, 581 КБ
Диоды импортные
pdf, 304 КБ
Дополнительная информация
Калькуляторы группы «Диоды прочие»
Типы корпусов импортных диодов