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N-Channel MOSFET, 100 A, 1200 V, 4-Pin TO 247 C3M0021120K

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30 шт., срок 6 недель

13 470 руб.

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Альтернативные предложения1

Номенклатурный номер: 8021900066

Артикул: C3M0021120K

Бренд: WOLFSPEED

Описание

Semiconductors\Discrete Semiconductors\MOSFETs

The Wolfspeed Silicon Carbide Power MOSFET C3MTM MOSFET Technology is in N-Channel Enhancement Mode. The Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs is a range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency.

Технические параметры

Channel Type	N
Maximum Continuous Drain Current	100 A
Maximum Drain Source Voltage	1200 V
Mounting Type	Through Hole
Package Type	TO 247
Pin Count	4
Automotive	Unknown
Channel Mode	Enhancement
Configuration	Single Dual Source
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Lead Shape	Through Hole
Material	SiC
Maximum Continuous Drain Current (A)	100
Maximum Drain Source Resistance (mOhm)	28.8@15V
Maximum Drain Source Voltage (V)	1200
Maximum Gate Source Voltage (V)	19
Maximum Operating Temperature (°C)	175
Maximum Power Dissipation (mW)	469000
Minimum Operating Temperature (°C)	-40
Mounting	Through Hole
Number of Elements per Chip	1
Part Status	Active
PCB changed	4
PPAP	Unknown
Product Category	Power MOSFET
Standard Package Name	TO
Supplier Package	TO-247
Tab	Tab
Typical Fall Time (ns)	14
Typical Gate Charge @ Vgs (nC)	162@15V
Typical Input Capacitance @ Vds (pF)	4818@1000V
Typical Rise Time (ns)	33
Typical Turn-Off Delay Time (ns)	57
Typical Turn-On Delay Time (ns)	29
Вес, г	1