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N-Channel MOSFET, 66 A, 1200 V, 4-Pin TO 247 C3M0040120K

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185 шт., срок 6 недель

9 600 руб.

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Альтернативные предложения2

Номенклатурный номер: 8022123949

Артикул: C3M0040120K

Бренд: WOLFSPEED

Описание

Semiconductors\Discrete Semiconductors\MOSFETs

The Wolfspeed Silicon Carbide Power MOSFET C3MTM MOSFET Technology is in N-Channel Enhancement Mode. The Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs is a range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency.

Технические параметры

Channel Type	N
Maximum Continuous Drain Current	66 A
Maximum Drain Source Voltage	1200 V
Mounting Type	Through Hole
Package Type	TO 247
Pin Count	4
Brand:	Wolfspeed
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	30
Fall Time:	9 ns
Forward Transconductance - Min:	21 S
Id - Continuous Drain Current:	66 A
Manufacturer:	Wolfspeed
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-40 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-247-4
Packaging:	Tube
Pd - Power Dissipation:	326 W
Product Category:	MOSFET
Product Type:	MOSFET
Product:	MOSFET
Qg - Gate Charge:	99 nC
Rds On - Drain-Source Resistance:	40 mOhms
Rise Time:	17 ns
Subcategory:	MOSFETs
Technology:	SiC
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	23 ns
Typical Turn-On Delay Time:	13 ns
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Vgs - Gate-Source Voltage:	-4 V, +15 V
Vgs th - Gate-Source Threshold Voltage:	3.6 V
Automotive	No
Channel Mode	Enhancement
Configuration	Single Dual Source
ECCN (US)	EAR99
Lead Shape	Through Hole
Material	SiC
Maximum Continuous Drain Current (A)	66
Maximum Drain Source Resistance (mOhm)	53.5@15V
Maximum Drain Source Voltage (V)	1200
Maximum Gate Source Leakage Current (nA)	250
Maximum Gate Source Voltage (V)	15
Maximum Gate Threshold Voltage (V)	3.6
Maximum IDSS (uA)	50
Maximum Operating Temperature (°C)	175
Maximum Positive Gate Source Voltage (V)	15
Maximum Power Dissipation (mW)	326000
Maximum Pulsed Drain Current @ TC=25°C (A)	223
Minimum Gate Threshold Voltage (V)	1.8
Minimum Operating Temperature (°C)	-40
Mounting	Through Hole
Number of Elements per Chip	1
Operating Junction Temperature (°C)	-40 to 175
Part Status	Active
PCB changed	4
PPAP	No
Process Technology	C3M
Product Category	Power MOSFET
Standard Package Name	TO
Supplier Package	TO-247
Supplier Temperature Grade	Industrial
Tab	Tab
Typical Diode Forward Voltage (V)	5.5
Typical Drain Source Resistance @ 25°C (mOhm)	40@15V
Typical Fall Time (ns)	9
Typical Gate Charge @ Vgs (nC)	99@15V
Typical Gate Plateau Voltage (V)	7
Typical Gate Threshold Voltage (V)	2.7
Typical Gate to Drain Charge (nC)	28
Typical Gate to Source Charge (nC)	34
Typical Input Capacitance @ Vds (pF)	2900@1000V
Typical Output Capacitance (pF)	103
Typical Reverse Recovery Charge (nC)	850
Typical Reverse Recovery Time (ns)	33
Typical Reverse Transfer Capacitance @ Vds (pF)	5@1000V
Typical Rise Time (ns)	17
Typical Turn-Off Delay Time (ns)	23
Typical Turn-On Delay Time (ns)	13
Вес, г	1