IRF7317TRPBF,N/Pкан 20B 6.6/-5.3A SO8

PartNumber: IRF7317TRPBF
Ном. номер: 8022698062
Производитель: Infineon Technologies
Фото 1/2 IRF7317TRPBF,N/Pкан 20B 6.6/-5.3A SO8
Фото 2/2 IRF7317TRPBF,N/Pкан 20B 6.6/-5.3A SO8
Есть в наличии более 60 шт. Отгрузка со склада в Москве 3 рабочих дня.
74 × = 74
от 70 шт. — 28 руб.
от 700 шт. — 23.58 руб.

Описание

The IRF7317TRPBF is a dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.

• Generation V technology
• Ultra low ON-resistance
• Surface-mount device
• Fully avalanche rated

Транзисторы полевые импортные

Дополнительная информация

Datasheet IRF7317TRPBF
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов