Категория	Транзистор
Тип	полевой
Вид	MOSFET

Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	5.2 A
Maximum Drain Source Resistance	1.8 Ω
Maximum Drain Source Voltage	800 V
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Gate Threshold Voltage	4.5V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	125 W
Minimum Gate Threshold Voltage	3V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	D2PAK(TO-263)
Pin Count	3
Series	MDmesh, SuperMESH
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	40 nC @ 10 V
Width	10.4mm
Current - Continuous Drain (Id) @ 25В°C	5.2A(Tc)
Drain to Source Voltage (Vdss)	800V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	56nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1138pF @ 25V
Manufacturer	STMicroelectronics
Operating Temperature	-55В°C ~ 150В°C(TJ)
Package / Case	TO-263-3, DВІPak(2 Leads+Tab), TO-263AB
Packaging	Cut Tape(CT)
Part Status	Active
Power Dissipation (Max)	125W(Tc)
Rds On (Max) @ Id, Vgs	1.8Ohm @ 2.6A, 10V
Supplier Device Package	D2PAK
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±30V
Vgs(th) (Max) @ Id	4.5V @ 100ВµA
Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1000
Fall Time:	20 ns
Forward Transconductance - Min:	5 S
Id - Continuous Drain Current:	5.2 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	D2PAK-3(TO-263-3)
Pd - Power Dissipation:	125 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	56 nC
Rds On - Drain-Source Resistance:	1.8 Ohms
Rise Time:	12 ns
Series:	STB7NK80ZT4
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Type:	MOSFET
Typical Turn-Off Delay Time:	45 ns
Typical Turn-On Delay Time:	20 ns
Vds - Drain-Source Breakdown Voltage:	800 V
Vgs - Gate-Source Voltage:	-30 V, +30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Automotive	No
Configuration	Single
ECCN (US)	EAR99
Lead Shape	Gull-wing
Maximum Continuous Drain Current (A)	5.2
Maximum Drain Source Resistance (mOhm)	1800@10V
Maximum Drain Source Voltage (V)	800
Maximum Gate Source Voltage (V)	±30
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	125000
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
PCB changed	2
PPAP	No
Process Technology	SuperMESH
Product Category	Power MOSFET
Standard Package Name	TO-263
Supplier Package	D2PAK
Supplier Temperature Grade	Industrial
Tab	Tab
Typical Fall Time (ns)	20
Typical Gate Charge @ 10V (nC)	40
Typical Gate Charge @ Vgs (nC)	40@10V
Typical Input Capacitance @ Vds (pF)	1138@25V
Typical Rise Time (ns)	12
Typical Turn-Off Delay Time (ns)	45
Typical Turn-On Delay Time (ns)	20
Вес, г	1.2

STB7NK80ZT4

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