C3M0120090J-TR, Trans MOSFET N-CH SiC 900V 22A 8-Pin(7+Tab) D2PAK T/R

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3200 шт., срок 5-7 недель

1 640 руб.

Кратность заказа 800 шт.

Добавить в корзину 800 шт. на сумму 1 312 000 руб.

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Номенклатурный номер: 8023895736

Артикул: C3M0120090J-TR

Бренд: WOLFSPEED

Diodes, Transistors and Thyristors\FET Transistors\MOSFETs

Trans MOSFET N-CH SiC 900V 22A 8-Pin(7+Tab) D2PAK T/R

Automotive	Unknown
Channel Mode	Enhancement
Channel Type	N
Configuration	Single Hex Source
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Material	SiC
Maximum Continuous Drain Current (A)	22
Maximum Drain Source Resistance (mOhm)	155@15V
Maximum Drain Source Voltage (V)	900
Maximum Gate Source Leakage Current (nA)	250
Maximum Gate Source Voltage (V)	18
Maximum Gate Threshold Voltage (V)	3.5
Maximum IDSS (uA)	100
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	83000
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	1
Packaging	Tape and Reel
Part Status	Active
PCB changed	7
Pin Count	8
PPAP	Unknown
Process Technology	C3M
Product Category	Power MOSFET
Supplier Package	D2PAK
Supplier Temperature Grade	Industrial
Tab	Tab
Typical Fall Time (ns)	5
Typical Gate Charge @ Vgs (nC)	17.3@15V
Typical Input Capacitance @ Vds (pF)	350@600V
Typical Rise Time (ns)	9
Typical Turn-Off Delay Time (ns)	15
Typical Turn-On Delay Time (ns)	12.5
Вес, г	1