AFT09MS007NT1, РЧ полевой транзистор, 30 В DC, 114 Вт, 136 МГц, 941 МГц, PLD-1.5W
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Описание
TRANSISTOR, RF, 30V, PLD-1.5W-2; Drain Source Voltage Vds:30VDC; Continuous Drain Current Id:-; Power Dissipation Pd:114W; Operating Frequency Min:136MHz; Operating Frequency Max:941MHz; RF Transistor Case:PLD-1.5W; No. of Pins:2Pins; Operating Temperature Max:150°C; Product Range:-; MSL:MSL 3 - 168 hours; SVHC:No SVHC (15-Jan-2019)
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Maximum Drain Source Voltage (V) | 30 |
| Maximum Frequency (MHz) | 941 |
| Maximum Gate Source Leakage Current (nA) | 1 |
| Maximum Gate Source Voltage (V) | 12 |
| Maximum Gate Threshold Voltage (V) | 2.6 |
| Maximum IDSS (uA) | 10 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 182000 |
| Maximum VSWR | 65 |
| Minimum Frequency (MHz) | 136 |
| Minimum Operating Temperature (°C) | -40 |
| Mode of Operation | CW |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Output Power (W) | 7.3(Typ) |
| Packaging | Tape and Reel |
| Part Status | NRND |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Process Technology | LDMOS |
| Supplier Package | PLD-1.5W |
| Typical Drain Efficiency (%) | 71 |
| Typical Forward Transconductance (S) | 9.8 |
| Typical Input Capacitance @ Vds (pF) | 107@7.5V |
| Typical Output Capacitance @ Vds (pF) | 56@7.5V |
| Typical Power Gain (dB) | 15.6(Max) |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 2.7@7.5V |
| Application | VHF/UHF |
| Drain Efficiency (Typ) | 71(%) |
| Drain Source Voltage (Max) | 30(V) |
| Forward Transconductance (Typ) | 9.8(S) |
| Frequency (Max) | 941(MHz) |
| Frequency (Min) | 136(MHz) |
| Input Capacitance (Typ)@Vds | 107@7.5V(pF) |
| Number of Elements | 1 |
| Operating Temp Range | -65C to 150C |
| Output Capacitance (Typ)@Vds | 56@7.5V(pF) |
| Output Power (Max) | 7.3(TYP) |
| Package Type | PLD-1.5W |
| Power Dissipation (Max) | 182000(mW) |
| Power Gain (Typ)@Vds | 15.2(MAX)@7.5V(dB) |
| Rad Hardened | No |
| Reverse Capacitance (Typ) | 2.7@7.5V(pF) |
| Screening Level | Military |
| Вес, г | 0.3 |
Техническая документация
Datasheet
pdf, 1474 КБ
Datasheet AFT09MS007NT1
pdf, 1414 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
