FF800R12KE7HPSA1, Trans IGBT Module N-CH 1200V 800A 7-Pin Tray
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см. техническую документацию
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55 660 руб.
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49 590 руб.
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Описание
Diodes, Transistors and Thyristors\IGBT Transistors\IGBT Module
Trans IGBT Module N-CH 1200V 800A 7-Pin Tray
Технические параметры
Automotive | No |
Channel Type | N |
Configuration | Dual |
ECCN (US) | EAR99 |
Maximum Collector-Emitter Voltage (V) | 1200 |
Maximum Continuous Collector Current (A) | 800 |
Maximum Gate Emitter Leakage Current (uA) | 0.1 |
Maximum Gate Emitter Voltage (V) | ±20 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -40 |
Mounting | Screw |
Part Status | Active |
PCB changed | 7 |
Pin Count | 7 |
PPAP | No |
Typical Collector Emitter Saturation Voltage (V) | 1.5 |
Brand: | Infineon Technologies |
Collector- Emitter Voltage VCEO Max: | 1.2 kV |
Collector-Emitter Saturation Voltage: | 1.75 V |
Configuration: | Dual |
Factory Pack Quantity: Factory Pack Quantity: | 10 |
Gate-Emitter Leakage Current: | 100 nA |
Manufacturer: | Infineon |
Maximum Gate Emitter Voltage: | 20 V |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -40 C |
Mounting Style: | Chassis Mount |
Packaging: | Tray |
Part # Aliases: | FF800R12KE7 SP005432766 |
Product Category: | IGBT Modules |
Product Type: | IGBT Modules |
Product: | IGBT Silicon Modules |
Series: | FFXR12KX7H |
Subcategory: | IGBTs |
Technology: | IGBT7-E7 |
Техническая документация
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