Категория	Транзистор
Тип	полевой
Вид	MOSFET

кол-во в упаковке	50
Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1000
Fall Time:	18 ns
Id - Continuous Drain Current:	3 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-220-3
Packaging:	Tube
Pd - Power Dissipation:	25 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	22.7 nC
Rds On - Drain-Source Resistance:	4.8 Ohms
Rise Time:	7 ns
Series:	STP3NK90ZFP
Subcategory:	MOSFETs
Technology:	Si
Tradename:	SuperMESH
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	45 ns
Typical Turn-On Delay Time:	18 ns
Vds - Drain-Source Breakdown Voltage:	900 V
Vgs - Gate-Source Voltage:	-30 V, +30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Automotive	No
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Lead Shape	Through Hole
Maximum Continuous Drain Current (A)	3
Maximum Drain Source Resistance (mOhm)	4800@10V
Maximum Drain Source Voltage (V)	900
Maximum Gate Source Leakage Current (nA)	10000
Maximum Gate Source Voltage (V)	±30
Maximum Gate Threshold Voltage (V)	4.5
Maximum IDSS (uA)	1
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	25000
Minimum Operating Temperature (°C)	-55
Mounting	Through Hole
Number of Elements per Chip	1
Packaging	Tube
Part Status	Active
PCB changed	3
Pin Count	3
PPAP	No
Process Technology	SuperMESH
Product Category	Power MOSFET
Standard Package Name	TO
Supplier Package	TO-220FP
Supplier Temperature Grade	Industrial
Tab	Tab
Typical Fall Time (ns)	18
Typical Gate Charge @ 10V (nC)	22.7
Typical Gate Charge @ Vgs (nC)	22.7@10V
Typical Input Capacitance @ Vds (pF)	590@25V
Typical Rise Time (ns)	7
Typical Turn-Off Delay Time (ns)	45
Typical Turn-On Delay Time (ns)	18
Brand	STMicroelectronics
Factory Pack Quantity	1000
Fall Time	18 ns
Height	9.3 mm
Id - Continuous Drain Current	3 A
Length	10.4 mm
Manufacturer	STMicroelectronics
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	Through Hole
Number of Channels	1 Channel
Package / Case	TO-220FP-3
Pd - Power Dissipation	25 W
Rds On - Drain-Source Resistance	4.8 Ohms
Rise Time	7 ns
RoHS	Details
Series	N-channel MDmesh
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	45 ns
Typical Turn-On Delay Time	18 ns
Vds - Drain-Source Breakdown Voltage	900 V
Vgs - Gate-Source Voltage	30 V
Width	4.6 mm
Maximum Continuous Drain Current	3 A
Maximum Drain Source Resistance	4.8 Ω
Maximum Drain Source Voltage	900 V
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Gate Threshold Voltage	4.5V
Maximum Power Dissipation	25 W
Minimum Gate Threshold Voltage	3V
Mounting Type	Through Hole
Package Type	TO-220FP
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	22.7 nC @ 10 V
Вес, г	3.5

STP3NK90ZFP, Транзистор: N-MOSFET, полевой, 900В, 1,89А, 25Вт, TO220FP

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