JANTXV2N3700UB, Bipolar (BJT) Transistor - NPN - 1 A Collector Current - 80 V Collector Emitter Breakdown - 500 mW - 3-SMD, No Le ...

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4 970 руб.

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от 25 шт. — 3 800 руб.

Добавить в корзину 1 шт. на сумму 4 970 руб.

Номенклатурный номер: 8031513279

Артикул: JANTXV2N3700UB

Discrete Semiconductors\Bipolar Transistors\Gp Bjt

Trans GP BJT NPN 80V 1A 500mW 4-Pin Case UB Waffle

Automotive	No
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Not Compliant
Material	Si
Maximum Base Emitter Saturation Voltage (V)	1.1@15mA@150mA
Maximum Collector Base Voltage (V)	140
Maximum Collector-Emitter Saturation Voltage (V)	0.2@15mA@150mA\|0.5@50mA@500mA
Maximum Collector-Emitter Voltage (V)	80
Maximum DC Collector Current (A)	1
Maximum Emitter Base Voltage (V)	7
Maximum Operating Temperature (°C)	200
Maximum Power Dissipation (mW)	500
Minimum Operating Temperature (°C)	-65
Mounting	Surface Mount
Number of Elements per Chip	1
Packaging	Waffle
Part Status	Preliminary
PCB changed	4
Pin Count	4
PPAP	No
Product Category	Bipolar Power
Supplier Package	Case UB
Supplier Temperature Grade	Military
Type	NPN