APL502LG, Trans MOSFET N-CH 500V 58A 3-Pin(3+Tab) TO-264 Tube

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16 540 руб.

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Добавить в корзину 1 шт. на сумму 16 540 руб.

Номенклатурный номер: 8031644224

Артикул: APL502LG

Discrete Semiconductors\Fet Transistors\Mosfet

N-канал 500 В 58A (Tc) 730 Вт (Tc) сквозное отверстие TO-264 [L]

Base Product Number	APL502 ->
Current - Continuous Drain (Id) @ 25В°C	58A (Tc)
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On, Min Rds On)	15V
ECCN	EAR99
FET Type	N-Channel
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	9000pF @ 25V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 150В°C (TJ)
Package	Tube
Package / Case	TO-264-3, TO-264AA
Power Dissipation (Max)	730W (Tc)
Rds On (Max) @ Id, Vgs	90mOhm @ 29A, 12V
REACH Status	REACH Unaffected
RoHS Status	RoHS Compliant
Supplier Device Package	TO-264 [L]
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±30V
Vgs(th) (Max) @ Id	4V @ 2.5mA
Brand:	Microchip Technology
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1
Fall Time:	16 ns
Id - Continuous Drain Current:	58 A
Manufacturer:	Microchip
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-264-3
Packaging:	Tube
Pd - Power Dissipation:	730 W
Product Category:	MOSFET
Product Type:	MOSFET
Rds On - Drain-Source Resistance:	90 mOhms
Rise Time:	27 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	56 ns
Typical Turn-On Delay Time:	13 ns
Vds - Drain-Source Breakdown Voltage:	500 V
Vgs - Gate-Source Voltage:	-30 V, +30 V
Vgs th - Gate-Source Threshold Voltage:	4 V