The IRFL014NTRPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation for use in a wide variety of applications. It is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Power dissipation of 1W is possible in a typical surface-mount application.
• Advanced process technology
• Dynamic dV/dt rating
• Fully avalanche rating
• Low static drain-to-source ON-resistance
Транзисторы / Полевые / Одиночные MOSFET транзисторы
Корпус: SOT-223, инфо: MOSFET N-CH 60V 2.7A SOT223