SI4850EY-T1-GE3, N-Channel MOSFET, 8.5 A, 60 V, 8-Pin SOIC SI4850EY-T1-GE3
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Описание
Semiconductors\Discrete Semiconductors\MOSFETs
Si4 TrenchFET® Power MOSFETsVishay / Siliconix Si4 TrenchFET® Power MOSFETs are used for amplifying electronic signals. These devices are available in N-channel, P-channel, and N- and P-channel versions. The Si4 MOSFETs offer different V GS and V DS options and temperature ranges. Vishay / Siliconix Si4 TrenchFET Power MOSFETs operate in an enhancement mode and are used for switching between electronic signals. These surface-mount MOSFETs are 100% R g and UIS tested.
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 8.5 A |
| Maximum Drain Source Resistance | 47 mΩ |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 3.3 W |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOIC |
| Pin Count | 8 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 18 nC @ 10 V |
| Width | 4mm |
| Brand | Vishay/Siliconix |
| Configuration | Single |
| Factory Pack Quantity | 2500 |
| Fall Time | 12 ns |
| Forward Transconductance - Min | 25 S |
| Id - Continuous Drain Current | 8.5 A |
| Manufacturer | Vishay |
| Mounting Style | SMD/SMT |
| Number Of Channels | 1 Channel |
| Package / Case | SO-8 |
| Packaging | Cut Tape or Reel |
| Part # Aliases | SI4850EY-GE3 |
| Pd - Power Dissipation | 3.3 W |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 18 nC |
| Rds On - Drain-Source Resistance | 22 mOhms |
| Rise Time | 10 ns |
| Series | SI4 |
| Subcategory | MOSFETs |
| Technology | Si |
| Tradename | TrenchFET |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 25 ns |
| Typical Turn-On Delay Time | 10 ns |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | 10 V |
| Vgs Th - Gate-Source Threshold Voltage | 1 V |
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 12 ns |
| Forward Transconductance - Min: | 25 S |
| Id - Continuous Drain Current: | 8.5 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOIC-8 |
| Part # Aliases: | SI4850EY-GE3 |
| Pd - Power Dissipation: | 3.3 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 18 nC |
| Rds On - Drain-Source Resistance: | 22 mOhms |
| Rise Time: | 10 ns |
| Series: | SI4 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | TrenchFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 25 ns |
| Typical Turn-On Delay Time: | 10 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Вес, г | 1 |
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