STGB10NC60KDT4, Биполярный транзистор IGBT, 600 В, 10 А, 60 Вт
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380 шт. со склада г.Москва, срок 12 дней
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Описание
Транзисторы / IGBT (БТИЗ) транзисторы / Одиночные IGBT транзисторы
Биполярный транзистор IGBT, 600 В, 10 А, 60 Вт
Технические параметры
| Корпус | D2Pak(TO-263) | |
| Base Part Number | STG*10NC | |
| Current - Collector (Ic) (Max) | 20A | |
| Current - Collector Pulsed (Icm) | 30A | |
| Gate Charge | 19nC | |
| IGBT Type | - | |
| Input Type | Standard | |
| Manufacturer | STMicroelectronics | |
| Mounting Type | Surface Mount | |
| Operating Temperature | -55В°C ~ 150В°C(TJ) | |
| Package / Case | TO-263-3, DВІPak(2 Leads+Tab), TO-263AB | |
| Packaging | Tape & Reel(TR) | |
| Part Status | Active | |
| Power - Max | 65W | |
| Reverse Recovery Time (trr) | 22ns | |
| Series | PowerMESHв(ў | |
| Supplier Device Package | D2PAK | |
| Switching Energy | 55ВµJ(on), 85ВµJ(off) | |
| Td (on/off) @ 25В°C | 17ns/72ns | |
| Test Condition | 390V, 5A, 10Ohm, 15V | |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 5A | |
| Voltage - Collector Emitter Breakdown (Max) | 600V | |
| Brand: | STMicroelectronics | |
| Collector- Emitter Voltage VCEO Max: | 600 V | |
| Collector-Emitter Saturation Voltage: | 2.2 V | |
| Configuration: | Single | |
| Continuous Collector Current at 25 C: | 20 A | |
| Continuous Collector Current Ic Max: | 20 A | |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 | |
| Manufacturer: | STMicroelectronics | |
| Maximum Gate Emitter Voltage: | -20 V, 20 V | |
| Maximum Operating Temperature: | +150 C | |
| Minimum Operating Temperature: | -55 C | |
| Mounting Style: | SMD/SMT | |
| Package / Case: | D2PAK-3 | |
| Pd - Power Dissipation: | 65 W | |
| Product Category: | IGBT Transistors | |
| Product Type: | IGBT Transistors | |
| Series: | STGB10NC60KDT4 | |
| Subcategory: | IGBTs | |
| Technology: | Si | |
| Channel Type | N | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Continuous Collector Current | 20 A | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Operating Temperature | +150 °C | |
| Maximum Power Dissipation | 65 W | |
| Minimum Operating Temperature | -55 °C | |
| Package Type | D2PAK(TO-263) | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Transistor Configuration | Single | |
| Automotive | No | |
| Configuration | Single | |
| ECCN (US) | EAR99 | |
| Lead Shape | Gull-wing | |
| Maximum Collector-Emitter Voltage (V) | 600 | |
| Maximum Continuous Collector Current (A) | 20 | |
| Maximum Gate Emitter Leakage Current (uA) | 0.1 | |
| Maximum Gate Emitter Voltage (V) | ±20 | |
| Maximum Operating Temperature (°C) | 150 | |
| Maximum Power Dissipation (mW) | 65 | |
| Minimum Operating Temperature (°C) | -55 | |
| Mounting | Surface Mount | |
| PCB changed | 2 | |
| PPAP | No | |
| Standard Package Name | TO-263 | |
| Supplier Package | D2PAK | |
| Supplier Temperature Grade | Industrial | |
| Tab | Tab | |
| Typical Collector Emitter Saturation Voltage (V) | 2.2 | |
| Вес, г | 2.8 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
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