P-Channel MOSFET, 800 mA, 150 V, 3-Pin SOT-23 FDN86265P

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240 руб.

Кратность заказа 25 шт.

Добавить в корзину 25 шт. на сумму 6 000 руб.

Номенклатурный номер: 8830855563

Артикул: FDN86265P

Semiconductors\Discrete Semiconductors\MOSFETs

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density.

Channel Mode	Enhancement
Channel Type	P
Maximum Continuous Drain Current	800 mA
Maximum Drain Source Resistance	2.2 Ω
Maximum Drain Source Voltage	150 V
Maximum Gate Source Voltage	-25 V, +25 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	1.5 W
Minimum Gate Threshold Voltage	2V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOT-23
Pin Count	3
Series	PowerTrench
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	2.9 nC @ 10 V
Width	1.4mm
Brand:	onsemi/Fairchild
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	3000
Fall Time:	9.9 ns
Forward Transconductance - Min:	1.5 S
Id - Continuous Drain Current:	800 mA
Manufacturer:	onsemi
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	SSOT-3
Pd - Power Dissipation:	1.5 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	2.9 nC
Rds On - Drain-Source Resistance:	1.2 Ohms
Rise Time:	2.2 ns
Series:	FDN86265P
Subcategory:	MOSFETs
Technology:	Si
Tradename:	PowerTrench
Transistor Polarity:	P-Channel
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	7.9 ns
Typical Turn-On Delay Time:	5.7 ns
Vds - Drain-Source Breakdown Voltage:	150 V
Vgs - Gate-Source Voltage:	-25 V, +25 V
Vgs th - Gate-Source Threshold Voltage:	3.3 V
Вес, г	0.24