Главная › Электронные компоненты › Транзисторы › Полевые (FETs, MOSFETs) › Nexperia › PMV45EN2R, Транзистор полевой N-канальный 30В 5.1A

PMV45EN2R, Транзистор полевой N-канальный 30В 5.1A

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400 шт. со склада г.Москва, срок 8 дней

30 руб.

Мин. кол-во для заказа 16 шт.

от 79 шт. — 24 руб.

от 158 шт. — 22 руб.

от 316 шт. — 20 руб.

Добавить в корзину 16 шт. на сумму 480 руб.

Альтернативные предложения3

Номенклатурный номер: 8877793599

Артикул: PMV45EN2R

Бренд: Nexperia B.V.

Описание

Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы

Транзистор полевой N-канальный 30В 5.1A

Технические параметры

Корпус	sot-23
Automotive	No
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant
Lead Shape	Gull-wing
Maximum Continuous Drain Current (A)	4.1
Maximum Continuous Drain Current on PCB @ TC=25°C (A)	4.1
Maximum Diode Forward Voltage (V)	1.2
Maximum Drain Source Resistance (mOhm)	42 10V
Maximum Drain Source Voltage (V)	30
Maximum Gate Source Leakage Current (nA)	100
Maximum Gate Source Voltage (V)	20
Maximum Gate Threshold Voltage (V)	2
Maximum IDSS (uA)	1
Maximum Operating Temperature (°C)	150
Maximum Positive Gate Source Voltage (V)	20
Maximum Power Dissipation (mW)	1115
Maximum Power Dissipation on PCB @ TC=25°C (W)	1.115
Maximum Pulsed Drain Current @ TC=25°C (A)	16
Minimum Gate Threshold Voltage (V)	1
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	1
Operating Junction Temperature (°C)	-55 to 150
Packaging	Tape and Reel
Part Status	Active
PCB changed	3
Pin Count	3
PPAP	No
Process Technology	TMOS
Product Category	Small Signal
Standard Package Name	SOT
Supplier Package	SOT-23
Typical Diode Forward Voltage (V)	0.8
Typical Fall Time (ns)	2
Typical Gate Charge @ 10V (nC)	3.6
Typical Gate Charge @ Vgs (nC)	3.6 10V
Typical Gate Plateau Voltage (V)	2.6
Typical Gate Threshold Voltage (V)	1.5
Typical Gate to Drain Charge (nC)	0.4
Typical Gate to Source Charge (nC)	0.5
Typical Input Capacitance @ Vds (pF)	209 15V
Typical Output Capacitance (pF)	50
Typical Reverse Transfer Capacitance @ Vds (pF)	17 15V
Typical Rise Time (ns)	12
Typical Turn-Off Delay Time (ns)	11
Typical Turn-On Delay Time (ns)	3
Forward Diode Voltage	1.2V
Maximum Continuous Drain Current	5.1 A
Maximum Drain Source Resistance	42 mΩ
Maximum Drain Source Voltage	30 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	2V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	5 W
Minimum Gate Threshold Voltage	1V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Package Type	SOT-23
Series	PMV45EN2
Transistor Configuration	Single
Typical Gate Charge @ Vgs	3.6 nC @ 10 V
Width	1.4mm
Lead Finish	Tin
Operating Temperature	-55 to 150 °C
RDS-on	42@10V mOhm
Typical Fall Time	2 ns
Typical Rise Time	12 ns
Typical Turn-Off Delay Time	11 ns
Typical Turn-On Delay Time	3 ns
Вес, г	0.05