FDV304P, Транзистор P-CH 25V 460MA [SOT-23]

Артикул: FDV304P
Ном. номер: 9000231252
Производитель: Fairchild Semiconductor
FDV304P, Транзистор P-CH 25V 460MA [SOT-23]
Доступно на заказ более 10 шт. Отгрузка со склада в Москве 7 недель.
290 × = 290
от 25 шт. — 30 руб.
от 100 шт. — 13.80 руб.

Описание

Enhancement Mode P-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
Fairchild FDV304P P-channel MOSFET Transistor, 0.46 A, 25 V, 3-pin SOT-23

Технические параметры

Typical Gate Charge @ Vgs
1.1 nC@ 4.5 V
тип монтажа
Surface Mount
Typical Input Capacitance @ Vds
63 pF@ 10 V
Minimum Operating Temperature
-55 °C
Typical Turn-Off Delay Time
55 ns
Typical Turn-On Delay Time
6 ns
Maximum Continuous Drain Current
0.46 A
размеры
2.92 x 1.3 x 0.93mm
длина
2.92mm
Number of Elements per Chip
1
разрешение
Power MOSFET
Channel Type
P
Maximum Drain Source Resistance
1.1 Ω
ширина
1.3mm
конфигурация
Single
высота
0.93mm
Channel Mode
Enhancement
максимальная рабочая температура
+150 °C
Maximum Drain Source Voltage
25 V
тип упаковки
SOT-23
Pin Count
3
Maximum Gate Source Voltage
8 V
Максимальная рассеиваемая мощность
0.35 W
Minimum Gate Threshold Voltage
0.65V

Техническая документация

FDV304P
pdf, 165 КБ

Дополнительная информация

Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Datasheet