BSC0911ND
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Описание
Электроэлемент
MOSFET N-Ch 25V 40A TISON-8
Технические параметры
| Brand | Infineon Technologies |
| Channel Mode | Enhancement |
| Configuration | 2 N-Channel |
| Factory Pack Quantity | 5000 |
| Fall Time | 2.2 ns, 4 ns |
| Forward Transconductance - Min | 38 S, 65 S |
| Height | 1.27 mm |
| Id - Continuous Drain Current | 40 A, 40 A |
| Length | 5.9 mm |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 2 Channel |
| Package / Case | TISON-8 |
| Packaging | Reel |
| Part # Aliases | BSC0911NDATMA1 BSC0911NDXT SP000934746 |
| Pd - Power Dissipation | 2.5 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 12 nC, 37 nC |
| Rds On - Drain-Source Resistance | 2.5 mOhms, 900 uOhms |
| Rise Time | 2.8 ns, 5.4 ns |
| RoHS | Details |
| Series | BSC0911 |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 2 N-Channel |
| Typical Turn-Off Delay Time | 15 ns, 25 ns |
| Typical Turn-On Delay Time | 3.3 ns, 3.8 ns |
| Vds - Drain-Source Breakdown Voltage | 25 V, 25 V |
| Vgs - Gate-Source Voltage | 20 V, 20 V |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V, 1.2 V |
| Width | 5.15 mm |
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: | 5000 |
| Fall Time: | 2.2 ns, 4 ns |
| Forward Transconductance - Min: | 38 S, 65 S |
| Id - Continuous Drain Current: | 40 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package/Case: | TISON-8 |
| Part # Aliases: | SP000934746 BSC911NDXT BSC0911NDATMA1 |
| Pd - Power Dissipation: | 2.5 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 12 nC, 37 nC |
| Rds On - Drain-Source Resistance: | 2.5 mOhms, 900 uOhms |
| Rise Time: | 2.8 ns, 5.4 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 2 N-Channel |
| Typical Turn-Off Delay Time: | 15 ns, 25 ns |
| Typical Turn-On Delay Time: | 3.3 ns, 3.8 ns |
| Vds - Drain-Source Breakdown Voltage: | 25 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
Техническая документация
Datasheet
pdf, 646 КБ
