APT5016BLLG
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Описание
Электроэлемент
Trans MOSFET N-CH 500V 30A 3-Pin(3+Tab) TO-247 Tube
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 30A(Tc) |
| Drain to Source Voltage (Vdss) | 500V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 72nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2833pF @ 25V |
| Manufacturer | Microsemi Corporation |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Part Status | Active |
| Power Dissipation (Max) | 329W(Tc) |
| Rds On (Max) @ Id, Vgs | 160 mOhm @ 15A, 10V |
| Series | POWER MOS 7В® |
| Standard Package | 30 |
| Supplier Device Package | TO-247(B) |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±30V |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Brand: | Microchip Technology |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1 |
| Fall Time: | 14 ns |
| Id - Continuous Drain Current: | 30 A |
| Manufacturer: | Microchip |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-247-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 329 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 72 nC |
| Rds On - Drain-Source Resistance: | 160 mOhms |
| Rise Time: | 10 ns |
| Series: | APT5016 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 27 ns |
| Typical Turn-On Delay Time: | 10 ns |
| Vds - Drain-Source Breakdown Voltage: | 500 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Вес, г | 11.7 |
Техническая документация
Datasheet
pdf, 197 КБ
