BC847B
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см. техническую документацию
см. техническую документацию
110 руб.
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19.66 руб.
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Описание
Электроэлемент
BC847B-E6433 BC847BE6433
Технические параметры
| Brand | Infineon Technologies |
| Collector- Base Voltage VCBO | 50 V |
| Collector- Emitter Voltage VCEO Max | 45 V |
| Collector-Emitter Saturation Voltage | 200 mV |
| Configuration | Single |
| Continuous Collector Current | 100 mA |
| DC Collector/Base Gain hfe Min | 200 |
| DC Current Gain hFE Max | 450 |
| Emitter- Base Voltage VEBO | 6 V |
| Factory Pack Quantity | 10000 |
| Gain Bandwidth Product fT | 250 MHz |
| Height | 1 mm |
| Length | 2.9 mm |
| Manufacturer | Infineon |
| Maximum DC Collector Current | 200 mA |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -65 C |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 |
| Packaging | Reel |
| Part # Aliases | BC847BE6433HTMA1 BC847BE6433XT SP000010576 |
| Pd - Power Dissipation | 330 mW |
| Product Category | Bipolar Transistors-BJT |
| Qualification | AEC-Q100 |
| RoHS | Details |
| Series | BC 847B |
| Transistor Polarity | NPN |
| Unit Weight | 0.000282 oz |
| Width | 1.3 mm |
| Automotive Qualification Standard | AEC-Q101 |
| Base Emitter Saturation Voltage Max. (Vbe(sat)) | 900 mV |
| Collector Emitter Saturation Voltage Max. (Vce(sat)) | 600 V |
| Collector-Base Voltage (Vcbo) | 50 V |
| Collector-Emitter Voltage (Vceo) | 45 V |
| Continuous Collector Current (Ic) | 100 mA |
| DC Current Gain (hFE) | 290 |
| Emitter-Base Voltage (Vebo) | 6 V |
| Mounting Type | SMD |
| MSL | Level-1 |
| Operating Temperature Max. | 150 °C |
| Operating Temperature Min. | -65 °C |
| Package Type | SOT-23 |
| Pins | 3 |
| Power Dissipation (Pd) | 330 mW |
| Transit Frequency | 250 MHz |
| Вес, г | 0.01 |
Техническая документация
uiBC646-to-BC848_e.pdf
pdf, 131 КБ
