STB60NF06LT4
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
4 шт. со склада г.Москва, срок 9-10 дней
1 010 руб.
от 2 шт. —
930 руб.
Добавить в корзину 1 шт.
на сумму 1 010 руб.
Альтернативные предложения3
Описание
Электроэлемент
Описание Транзистор: N-MOSFET, полевой, 60В, 42А, 110Вт, D2PAK Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand | STMicroelectronics |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 1000 |
| Fall Time | 30 ns |
| Forward Transconductance - Min | 20 S |
| Height | 4.6 mm |
| Id - Continuous Drain Current | 60 A |
| Length | 10.4 mm |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -65 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TO-263-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 110 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 14 mOhms |
| Rise Time | 220 ns |
| RoHS | Details |
| Series | STB60NF06 |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | MOSFET |
| Typical Turn-Off Delay Time | 55 ns |
| Typical Turn-On Delay Time | 35 ns |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | 15 V |
| Width | 9.35 mm |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Fall Time: | 30 ns |
| Forward Transconductance - Min: | 20 S |
| Id - Continuous Drain Current: | 60 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -65 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-263-3 |
| Pd - Power Dissipation: | 110 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 35 nC |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 14 mOhms |
| Rise Time: | 220 ns |
| Series: | STB60NF06LT4 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | STripFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 55 ns |
| Typical Turn-On Delay Time: | 35 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
Техническая документация
Сроки доставки
Выберите регион, чтобы увидеть способы получения товара.
