CSD17575Q3
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Описание
Электроэлемент
30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 3.2 mOhm 8-VSON-CLIP -55 to 150
Технические параметры
| Brand | Texas Instruments |
| Configuration | Single |
| Factory Pack Quantity | 250 |
| Fall Time | 3 ns |
| Forward Transconductance - Min | 118 S |
| Height | 1 mm |
| Id - Continuous Drain Current | 60 A |
| Length | 3.3 mm |
| Manufacturer | Texas Instruments |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | VSON-Clip-8 |
| Packaging | Cut Tape |
| Pd - Power Dissipation | 108 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 23 nC |
| Rds On - Drain-Source Resistance | 2.6 mOhm |
| Rise Time | 10 ns |
| RoHS | Details |
| Series | CSD17575Q3 |
| Technology | Si |
| Tradename | NexFET |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 20 ns |
| Typical Turn-On Delay Time | 4 ns |
| Unit Weight | 0.000847 oz |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 1.4 V |
| Width | 3.3 mm |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 3 A |
| Maximum Drain Source Resistance | 2300000 Ω |
| Maximum Drain Source Voltage | 30 V |
| Maximum Gate Threshold Voltage | 1.1V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | VSONP |
| Pin Count | 8 |
| Transistor Material | Si |
Техническая документация
Datasheet
pdf, 474 КБ
