BC846DS
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см. техническую документацию
см. техническую документацию
110 руб.
Мин. кол-во для заказа 2 шт.
от 5 шт. —
53 руб.
от 10 шт. —
43 руб.
от 100 шт. —
32.89 руб.
Добавить в корзину 2 шт.
на сумму 220 руб.
Альтернативные предложения1
Описание
Электроэлемент
TRANSISTOR, NPN, 65V, 100MA, SOT457; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-457; No.
Технические параметры
| Brand | Nexperia |
| Collector- Base Voltage VCBO | 80 V |
| Collector- Emitter Voltage VCEO Max | 65 V |
| Configuration | Dual |
| Continuous Collector Current | 100 mA |
| DC Collector/Base Gain hfe Min | 300 |
| DC Current Gain hFE Max | 200 at 2 mA at 5 V |
| Emitter- Base Voltage VEBO | 6 V |
| Factory Pack Quantity | 3000 |
| Gain Bandwidth Product fT | 100 MHz |
| Height | 1 mm |
| Length | 3.1 mm |
| Manufacturer | Nexperia |
| Maximum DC Collector Current | 200 mA |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Package / Case | SC-74-6 |
| Packaging | Reel |
| Pd - Power Dissipation | 250 mW |
| Product Category | Bipolar Transistors-BJT |
| RoHS | Details |
| Transistor Polarity | NPN |
| Width | 1.7 mm |
| Maximum Collector Base Voltage | 80 V |
| Maximum Collector Emitter Voltage | 65 V |
| Maximum Emitter Base Voltage | 6 V |
| Maximum Operating Frequency | 100 MHz |
| Maximum Power Dissipation | 380 mW |
| Minimum DC Current Gain | 200 |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 2 |
| Package Type | SOT-457(SC-74) |
| Pin Count | 6 |
| Transistor Configuration | Isolated |
| Transistor Type | NPN |
| Вес, г | 0.0447 |
